^smi-conductoi zpioducti, una. 20 stern ave. springfield, new jersey 07081 u.sa telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 MRF914 rf & microwave discrete low power transistors features ? silicon npn, high frequency transistor ? high power gain - gmax = 15 db (typ) @ f = 500 mhz ? low noise figure: nf = 2.5 db (typ) @ f = 500 mhz ? high ft - 4.5 ghz (typ) @ 1c = 20 madc to-72 description: designed primarily for use in high gain, low noise general purpose amplifiers. also excellent for high speed switching applications. absolute maximum ratings itcase = 25 c) symbol vcfh vcbo vebo ic parameter collector-emitter voltage collector-base voltage emitter-base voltage collector current value 12 20 3.0 40 unit vdc vdc vdc ma thermal data pd total device dissipation @ ta = 25 c derate ahnve ?sc 200 1 r mwatts mw/ p. electrical specifications (tease - 25 cl nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. m semi-conductors encourages customers to verify that datasheets are current before placing orders.
MRF914 static [off] symbol bvceo bvcso bvebo icbo test conditions collector-emitter breakdown voltage (1c = 1.0 madc, ib = 0) collector-base breakdown voltage (ic= 0.1 madc, ie=0) emitter-base breakdown voltage (ie = 0.1 madc, 1c = 0) collector cutoff current (vce = 15 vdc, ie = 0 vdc) value min. 12 20 3.0 - typ. - - - - max. - - - 50 unit vdc vdc vdc na static (on) hfe dc current gain (1c = 20 madc, vce = 10 vdc) 30 _ 200 . dynamic symbol fr ccb test conditions current-gain - bandwidth product (1c = 20 madc, vce = 10 vdc, f = .5 ghz) junction capacitance (vcb = 10vdc, ie=0, f=1 mhz) value min. - - typ. 4.5 0.7 max. - - unit ghz pf
MRF914 functional symbol mag c 2 0|21| nf gmax test conditions maximum available gain (1c = 20 madc, vce = 10 vdc, f = 500 mhz) insertion gain (1c = 20 madc, vce = 10 vdc, f = 500 mhz) noise figure (1c = 5.0 madc, vce = 10 vdc, f = 500 mhz) maximum available power gain (1c = 20 madc, vce = 10 vdc, f = 500 mhz) value win. - 10 - - typ. 12 11 2.5 15 max. - - - - unit db db db db table 1. common emitter s-parameters, @ vce = 10 v, 1c = 20 ma f (mhz) 100 200 300 400 500 600 700 800 900 1000 s11 |s11| .45 .32 .26 .24 .22 .21 .19 .18 .18 .18 z$ -36 -38 -36 -36 -39 -40 -44 -48 -58 -65 s21 |s21| 15.6 8.7 6.3 4.6 3.8 3.4 3.0 2.5 2.4 2.4 z4> 115 101 91 86 84 78 72 68 69 62 s12 |s12| .03 .05 .08 .1 .12 .15 .17 .19 .20 .23 z$ 75 78 76 74 75 71 68 65 67 63 s22 |s22| .67 .55 .54 .52 .48 .48 .47 .46 .44 .45 z$ -20 -19 -17 -22 -23 -26 -29 -35 -40 -42
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